?2004 fairchild semiconductor corporation 1 www.fairchildsemi.com fjp13007 rev. c fjp13007 npn silicon transistor fjp13007 npn silicon transistor high voltage switch mode application ? high speed switching ? suitable for electronic ballast and switching regulator absolute maximum ratings t a = 25c unless otherwise noted symbol parameter value units v cbo collector-base voltage 700 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 9 v i c collector current (dc) 8 a i cp collector current (pulse) 16 a i b base current 4 a p c collector dissipation (t a = 25 c) 80 w t j junction temperature 150 c t stg storage temperature -65 ~ 150 c 1.base 2.collector 3.emitter 1 to-220
2 www.fairchildsemi.com fjp13007 rev. c fjp13007 npn silicon transistor electrical characteristics t c = 25c unless otherwise noted * pulse test: pw 300 s, duty cycle 2% h fe classification symbol parameter conditions min. typ. max units bv ceo collector-emitter breakdown voltage i c = 10ma, i b = 0 400 v i ebo emitter cut-off current v eb = 9v, i c = 0 1 ma h fe1 h fe2 dc current gain * v ce = 5v, i c = 2a v ce = 5v, i c = 5a 8 5 60 30 v ce(sat) collector-emitter saturation voltage i c = 2a, i b = 0.4a i c = 5a, i b = 1a i c = 8a, i b = 2a 1 2 3 v v v v be(sat) base-emitter saturation voltage i c = 2a, i b = 0.4a i c = 5a, i b = 1a 1.2 1.6 v v f t current gain bandwidth product v ce = 10v, i c = 0.5a 4 mhz c ob output capacitance v cb = 10v, f = 0.1mhz 110 pf t on turn on time v cc = 125v, i c = 5a i b1 = -i b2 = 1a r l = 50 ? 1.6 s t stg storge time 3.0 s t f fall time 0.7 s classification h1 h2 h fe1 15 ~ 28 26 ~ 39
3 www.fairchildsemi.com fjp13007 rev. c fjp13007 npn silicon transistor typical performance characteristics figure 1. dc current gain figure 2. saturation voltage figure 3. collector output capacitance figure 4. turn on time figure 5. turn off time figure 6. forward biased safe operating area 0.1 1 10 1 10 100 v ce = 5v h fe , dc current gain i c [a], collector current 0.1 1 10 100 0.01 0.1 1 10 i c = 3 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[v], saturation voltage i c [a], collector current 0.1 1 10 100 1000 1 10 100 1000 c ob [pf], output capacitance v cb [v], collector-base voltage 0.1 1 10 10 100 1000 v cc =125v i c =5i b t d , v be (off)=5v t r t r , t d [ns], turn on time i c [a], collector current 0.1 1 10 10 100 1000 10000 v cc =125v i c =5i b t f t stg t stg , t f [ns], turn off time i c [a], collector current 1 10 100 1000 0.01 0.1 1 10 100 10 s 100 s 1ms dc i c [a], collector current v ce [v], collector-emitter voltage
4 www.fairchildsemi.com fjp13007 rev. c fjp13007 npn silicon transistor typical performance characteristics (continued) figure 7. reverse biased safe operating area figure 8. power derating 10 100 1000 10000 0.01 0.1 1 10 100 vcc=50v, i b1 =1a, i b2 = -1a l = 1mh i c [a], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 100 p c [w], power dissipation t c [ o c], case temperature
5 www.fairchildsemi.com fjp13007 rev. c fjp13007 npn silicon transistor mechanical dimensions 4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.10 ?.05 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 dimensions in millimeters
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